JPH0321519B2 - - Google Patents

Info

Publication number
JPH0321519B2
JPH0321519B2 JP60134721A JP13472185A JPH0321519B2 JP H0321519 B2 JPH0321519 B2 JP H0321519B2 JP 60134721 A JP60134721 A JP 60134721A JP 13472185 A JP13472185 A JP 13472185A JP H0321519 B2 JPH0321519 B2 JP H0321519B2
Authority
JP
Japan
Prior art keywords
sic
silicon carbide
crystal
single crystal
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60134721A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61291494A (ja
Inventor
Akira Suzuki
Masaki Furukawa
Mitsuhiro Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60134721A priority Critical patent/JPS61291494A/ja
Priority to US06/872,604 priority patent/US4897149A/en
Priority to DE19863620329 priority patent/DE3620329A1/de
Publication of JPS61291494A publication Critical patent/JPS61291494A/ja
Publication of JPH0321519B2 publication Critical patent/JPH0321519B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60134721A 1985-06-19 1985-06-19 炭化珪素単結晶基板の製造方法 Granted JPS61291494A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60134721A JPS61291494A (ja) 1985-06-19 1985-06-19 炭化珪素単結晶基板の製造方法
US06/872,604 US4897149A (en) 1985-06-19 1986-06-10 Method of fabricating single-crystal substrates of silicon carbide
DE19863620329 DE3620329A1 (de) 1985-06-19 1986-06-18 Verfahren zur herstellung von einkristall-substraten aus siliciumcarbid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60134721A JPS61291494A (ja) 1985-06-19 1985-06-19 炭化珪素単結晶基板の製造方法

Publications (2)

Publication Number Publication Date
JPS61291494A JPS61291494A (ja) 1986-12-22
JPH0321519B2 true JPH0321519B2 (en]) 1991-03-22

Family

ID=15135045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60134721A Granted JPS61291494A (ja) 1985-06-19 1985-06-19 炭化珪素単結晶基板の製造方法

Country Status (3)

Country Link
US (1) US4897149A (en])
JP (1) JPS61291494A (en])
DE (1) DE3620329A1 (en])

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766971B2 (ja) * 1989-06-07 1995-07-19 シャープ株式会社 炭化珪素半導体装置
US5119540A (en) * 1990-07-24 1992-06-09 Cree Research, Inc. Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product
JP2556621B2 (ja) * 1990-12-11 1996-11-20 ホーヤ株式会社 炭化ケイ素膜の成膜方法
US5633192A (en) * 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US7235819B2 (en) * 1991-03-18 2007-06-26 The Trustees Of Boston University Semiconductor device having group III nitride buffer layer and growth layers
DE69229265T2 (de) * 1991-03-18 1999-09-23 Trustees Of Boston University, Boston Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid
JPH04292499A (ja) * 1991-03-22 1992-10-16 Sharp Corp 炭化珪素単結晶の製造方法
DE4135076A1 (de) * 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung
US5433167A (en) * 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
GB2264957B (en) * 1992-03-12 1995-09-20 Bell Communications Res Deflected flow in a chemical vapor deposition cell
US5501173A (en) * 1993-10-18 1996-03-26 Westinghouse Electric Corporation Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates
US5668395A (en) * 1994-11-22 1997-09-16 Northwestern University Composition for InSB and GaAs thin film on silicon substrate for use in photodetectors
US5650635A (en) * 1995-07-14 1997-07-22 Northwestern University Multiple stacked Sb-based heterostructures
KR100454275B1 (ko) * 1995-08-16 2005-01-31 시크리스탈 아게 단결정을생성시키기위한시이드결정,상기시이드결정의용도및SiC단결정또는단결정SiC층의생성방법
SE9503428D0 (sv) † 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
US6536944B1 (en) * 1996-10-09 2003-03-25 Symyx Technologies, Inc. Parallel screen for rapid thermal characterization of materials
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US5954874A (en) * 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US6045612A (en) * 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6086672A (en) * 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
US6706114B2 (en) * 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
JP4747350B2 (ja) * 2004-02-05 2011-08-17 農工大ティー・エル・オー株式会社 エピタキシャル層の気相成長装置
JP4765025B2 (ja) * 2004-02-05 2011-09-07 農工大ティー・エル・オー株式会社 ＡｌＮエピタキシャル層の成長方法及び気相成長装置
WO2010024390A1 (ja) * 2008-08-29 2010-03-04 住友金属工業株式会社 ＳｉＣ単結晶膜の製造方法および装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL248844A (en]) * 1959-02-27
NL6615059A (en]) * 1966-10-25 1968-04-26
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
DE2364989C3 (de) * 1973-12-28 1979-10-18 Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4161743A (en) * 1977-03-28 1979-07-17 Tokyo Shibaura Electric Co., Ltd. Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
JPS5443200A (en) * 1977-09-13 1979-04-05 Sharp Corp Production of silicon carbide substrate
US4382837A (en) * 1981-06-30 1983-05-10 International Business Machines Corporation Epitaxial crystal fabrication of SiC:AlN
JPS6027699A (ja) * 1983-07-22 1985-02-12 Agency Of Ind Science & Technol 炭火硅素単結晶膜の製造法

Also Published As

Publication number Publication date
US4897149A (en) 1990-01-30
DE3620329A1 (de) 1987-01-02
JPS61291494A (ja) 1986-12-22
DE3620329C2 (en]) 1988-09-08

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